型号:

BSS8402DW-7

RoHS:
制造商:Diodes Inc描述:MOSFET N+P 50,60V 130MA SC70-6
详细参数
数值
产品分类 分离式半导体产品 >> FET - 阵列
BSS8402DW-7 PDF
产品变化通告 Encapsulate Change 09/July/2007
标准包装 3,000
系列 -
FET 型 N 和 P 沟道
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 60V,50V
电流 - 连续漏极(Id) @ 25° C 115mA,130mA
开态Rds(最大)@ Id, Vgs @ 25° C 7.5 欧姆 @ 50mA,5V
Id 时的 Vgs(th)(最大) 2.5V @ 250µA
闸电荷(Qg) @ Vgs -
输入电容 (Ciss) @ Vds 50pF @ 25V
功率 - 最大 200mW
安装类型 表面贴装
封装/外壳 6-TSSOP,SC-88,SOT-363
供应商设备封装 SOT-363
包装 带卷 (TR)
其它名称 BSS8402DWDITR
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